2000-04-11 page 1 spp80n08s2l-07 SPB80N08S2L-07 target data sheet optimos ? ? ? ? = == = power-transistor features ? n-channel ? enhancement mode ? avalanche rated ? logic level ? d v /d t rated ? = 175c operating temperature product summary drain source voltage v ds 75 v drain-source on-state resistance r ds ( on ) 7.1 m ? continuous drain current i d 80 a type package ordering code spp80n08s2l-07 p-to220-3-1 - SPB80N08S2L-07 p-to263-3-2 - pin 1 pin 2/4 pin 3 g d s maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c, 1) t c = 100 c i d 80 80 a pulsed drain current t c = 25 c i d puls 320 avalanche energy, single pulse i d = 80 a , v dd = 25 v, r gs = 25 ? e as 810 mj avalanche energy, periodic limited by t j max e a r 35.7 reverse diode d v /d t i s = 80 a, v ds = 60 v, d i /d t = 200 a/s, t jmax = 175 c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 357 w operating and storage temperature t j , t st g -55...+175 c iec climatic category; din iec 68-1 55/175/56 1 current limited by bondwire; with an r thjc = 0.5 k/w the chip is able to carry i d = 132a
2000-04-11 page 2 spp80n08s2l-07 SPB80N08S2L-07 target data sheet thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 0.5 k/w thermal resistance, junction - ambient, leaded r thj a - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = 0 v, i d = 1 ma v (br)dss 75 - - v gate threshold voltage, v gs = v ds i d = 250 a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 75 v, v gs = 0 v, t j = 25 c v ds = 75 v, v gs = 0 v, t j = 125 c i dss - - 0.01 1 1 100 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 1 100 na drain-source on-state resistance v gs = 4.5 v, i d = 40 a r ds(on) - tbd 9 m ? drain-source on-state resistance v gs = 10 v, i d = 40 a r ds(on) - tbd 7.1 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2000-04-11 page 3 spp80n08s2l-07 SPB80N08S2L-07 target data sheet electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 2* i d * r ds(on)max , i d = 80 a g fs tbd tbd - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - tbd tbd pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - tbd tbd reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - tbd tbd turn-on delay time v dd = 40 v, v gs = 4.5 v, i d = 80 a, r g = 1.1 ? t d(on) - tbd tbd ns rise time v dd = 40 v, v gs = 4.5 v, i d = 80 a, r g = 1.1 ? t r - tbd tbd turn-off delay time v dd = 40 v, v gs = 4.5 v, i d = 80 a, r g = 1.1 ? t d(off) - tbd tbd fall time v dd = 40 v, v gs = 4.5 v, i d = 80 a, r g = 1.1 ? t f - tbd tbd
2000-04-11 page 4 spp80n08s2l-07 SPB80N08S2L-07 target data sheet electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. gate charge characteristics gate to source charge v dd = 60 v, i d = 80 a q gs - tbd tbd nc gate to drain charge v dd = 60 v, i d = 80 a q gd - tbd tbd gate charge total v dd = 60 v, i d = 80 a, v gs = 0 to 10 v q g - tbd tbd gate plateau voltage v dd = 60 v, i d = 80 a v (plateau) - tbd - v parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - 80 a inverse diode direct current, pulsed t c = 25 c i sm - - 320 inverse diode forward voltage v gs = 0 v, i f = 80 a v sd - 0.9 1.3 v reverse recovery time v r = 40 v, i f = l s , d i f /d t = 100 a/s t rr - tbd tbd ns reverse recovery charge v r = 40 v, i f = l s , d i f /d t = 100 a/s q rr - tbd tbd nc soft factor t f / t s s - tbd -
2000-04-11 page 5 spp80n08s2l-07 SPB80N08S2L-07 target data sheet published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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